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(60/2): CRACKThe present invention relates to a laser beam exposure method and a laser beam exposure apparatus used for the manufacture of semiconductor devices, liquid crystal display devices and the like, more particularly, to a method of and an apparatus for precisely focusing a laser beam on a substrate by using an optical element for spatial modulation, and to a method of and an apparatus for precisely focusing a laser beam on a substrate by using an optical element for pulse modulation.
In recent years, with the progress of semiconductor integrated circuit devices toward high performance and high speed, a variety of factors have tended to decrease the performance of an optical system used for exposing a circuit pattern on a substrate, including a stepper.
As an example, in a UV stepper used for circuit exposure, an exposure beam from a UV laser diode generally deforms and diffuses due to the influence of the refractive index of a glass material used for an optical system and a surrounding gas atmosphere, and as a result, the shape of a circuit pattern to be transferred becomes non-uniform.
FIG. 10A shows schematically a light intensity distribution of an exposure beam with which a substrate as a target is exposed by a UV stepper, and FIG. 10B shows the pattern of the substrate after it has been exposed by the UV stepper. As shown in FIGS. 10A and 10B, the wavelength of the exposure beam from a UV laser diode varies (oscillates) with time, and as a result, a distribution appears on the light intensity distribution of the exposure beam. This is so-called an intensity fluctuation. In the following description, the intensity fluctuation may sometimes be expressed as a fluctuation in beam intensity or a fluctuation in exposure energy. Also, it should be noted that the shape of the exposure beam is also deformed by a phenomenon called xe2x80x9crattlingxe2x80x9d.
FIGS. 11A and 11B show the exposure beam having an intensity fluctuation and the pattern that is actually transferred on a substrate after it has been exposed by the UV stepper, respectively. As can be understood from FIGS. 11A and 11B, the exposure beam that has intensity fluctuations and the pattern
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